2000. 4. 10 1/3 semiconductor technical data KTC4526 triple diffused npn transistor revision no : 0 high voltage and high reliability high speed switching, wide soa maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe (1) classification r:15 30, o:20 40 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =800v, i e =0 - - 10 a emitter cut-off current i ebo v eb =5v, i c =0 - - 10 a collector-emitter sustaning voltage v cex(sus) i c =0.75a, i b1 =-i b2 =0.15a l=5mh, clamped 800 - - v collector-emitter saturation voltage v ce(sat) i c =0.75a, i b =0.15a - - 2 v base-emitter saturation voltage v be(sat) i c =0.75a, i b =0.15a - - 1.5 v dc current gain h fe (1) (note) v ce =5v, i c =0.1a 15 - 40 h fe (2) v ce =5v, i c =0.5a 8 - - collector-base breakdown voltage v (br)cbo i c =1ma, i e =0 1100 - - v collector-emitter breakdown voltage v (br)ceo i c =5ma, r be = , 800 - - v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 7 - - v collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 35 - pf transition frequency f t v ce =10v, i c =0.1a - 15 - mhz switching time turn on time t on i b1 400? b1 i cc v =400v i b2 i b2 20 s i =0.2a , i =-0.4a 1% b1 b2 output duty cycle input < = - - 0.5 s storage time t stg - - 3 fall time t f - - 0.3 characteristic symbol rating unit collector-base voltage v cbo 1100 v collector-emitter voltage v ceo 800 v emitter-base voltage v ebo 7 v collector current dc i c 1.5 a pulse i c 5 base current i b 0.8 a collector power dissipation (tc=25 1 ) p c 40 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 free datasheet http:///
2000. 4. 10 2/3 KTC4526 revision no : 0 i - v ce ce collector-emitter voltage v (v) 0 1 c 0 collector current i (a) i - v cbe be base emitter voltage v (v) 0 c collector current i (a) dc current gain h fe collector current i (a) c c fe h - i 1 0.01 1 0.2 0.4 0.6 0.8 i =0ma b 0.03 0.1 0.3 2 5 10 30 50 100 v =5v ce 0 v =5v ce c 1.0 1.2 2345678 910 i =5ma b i =10ma b i =20m a b i =40ma b i =60ma b i =80ma b i =100ma b i =120ma b 3 collector current i (a) c v , v - i ce(sat) c saturation voltage 0.01 0.05 0.03 0.3 0.1 0.5 1 3 5 i =5.i 0.03 0.01 0.1 0.3 1 2 c b v be(sat) v ce(sat) 0.2 0.4 0.6 0.8 1.2 1.0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 collector current i (a) 0.1 c 0.03 switching characteristics 0.05 0.1 0.3 0.5 1 3 5 10 stg t switching time ( s) 0.3 0.5 1 3 5 t t on f collector current i (a) 1 0.001 collector-emitter voltage v (v) ce c 2 5 10 50 100 200 1 k 500 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 safe operating area 20 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * i max(pulse)* c c i max(continuous) 1ms * 10 m s * 1 00 s* dc ope rat io n v , v (v) be(sat) ce(sat) be(sat)
2000. 4. 10 3/3 KTC4526 revision no : 0 collector current i (a) 10 0.01 collector emitter voltage v (v) ce c 20 50 100 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 reverse bias safe operating area collector power dissipation pc (w) ambient temperatiure ta ( c) i 2=-0.15a b pc - ta 200 500 1k 2k 5k 10k 0 10 20 30 40 50 0 50 100 150 200 25 75 125 175 tc=ta infinite heat sink
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